Strong current-direction dependence of anisotropic magnetoresistance in single crystalline Fe/GaAs(110) films
Strong current-direction dependence of anisotropic magnetoresistance in single crystalline Fe/GaAs(110) films
复制标题
单晶 Fe/GaAs(110) 薄膜中各向异性磁阻的强电流方向依赖性
DOI：
10.1016/j.jmmm.2019.166204
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发表时间：
2020
影响因子：
2.7
通讯作者：
Y.Z.Wu
中科院分区：
文献类型：
--
作者：
F.L.Zeng;C.Zhou;M.W.Jia;D.Shi;Y.Huo;W.Zhang;Y.Z.Wu
实验研究了Fe（110）单晶薄膜的纵向和横向磁电阻率随磁化方向和电流方向的变化规律。不寻常的依赖性和对称性被揭示，但不能很好地描述所建立的传统模型。此外，对于沿沿着不同晶向的电流，各向异性磁阻比相差一个数量级以上。的解析表达式的电阻率推导出通过使用一个唯象模型的基础上的电阻率张量相对于磁化方向余弦的一系列扩展到第四阶。这些表达式可以很好地拟合实验数据，由拟合得到的电阻率系数与电流方向相关测量的对称性一致。由于电子-声子散射，电阻率系数随温度增加。我们的研究表明，自旋相关的输运性质可以表现出较强的磁晶效应，这为利用材料结晶度设计未来的自旋电子学器件开辟了新的途径。
The longitudinal and transverse resistivities of single crystalline Fe(1 1 0) film are both experimentally studied as functions of the magnetization orientation and the current orientation with respect to the crystalline axes. Unusual dependences and symmetries are revealed but cannot be described well by established conventional models. Furthermore, the anisotropic magnetoresistance ratios differ by more than one order of magnitude for currents along different crystalline directions. Analytical expressions for the resistivities are derived by using a phenomenological model based on a series expansion of the resistivity tensor with respect to the direction cosines of the magnetization up to the fourth order. The experimental data can be fitted well by these expressions, and the resistivity coefficients obtained from the fitting are consistent with the symmetries of the current-direction dependence measurements. The resistivity coefficients increase with temperature due to electron-phonon scattering. Our studies suggest that the spin-dependent transport properties could exhibit strong magneto-crystalline effect, which paves a new way for designing future spintronics devices by taking advantage of the material crystallinity.