Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures
Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures
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DOI：
10.1063/1.3499656
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发表时间：
2010-10
影响因子：
4
通讯作者：
V. Polyakov;V. Cimalla;V. Lebedev;K. Köhler;S. Müller;P. Waltereit;O. Ambacher
中科院分区：
文献类型：
--
作者：
V. Polyakov;V. Cimalla;V. Lebedev;K. Köhler;S. Müller;P. Waltereit;O. Ambacher
用系综蒙特卡罗方法研究了Al含量对GaN/AlxGa1−xN/GaN异质结中二维电子气迁移率的影响。利用两种界面极化电荷模型，计算了不同Al组分的势垒层在8%~35%范围内的室温低场迁移率。所有相关的散射机制都被认为是对测量的迁移率的定量描述。结果表明，对于所考察的所有Al含量，异质结构中的2DEG输运主要受位错散射的影响。讨论了合金散射和界面粗糙度散射的作用。
The influence of the Al content on the mobility of the two-dimensional electron gas (2DEG) in GaN/AlxGa1−xN/GaN heterostructures is studied by employing the ensemble Monte Carlo method. Using two interface polarization charge models, we calculate the room temperature low-field mobility at different Al compositions of the barrier layer ranging from 8% up to 35%. All relevant scattering mechanisms are considered to provide a quantitative description of the measured mobilities. We show that 2DEG transport in the heterostructures is mostly affected by dislocation scattering for all Al contents examined. The role of alloy scattering and interface roughness scattering is also discussed.