A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
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DOI：
10.1080/08927020701730393
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发表时间：
2008-01
影响因子：
2.1
通讯作者：
J. He;W. Bian;Y. Chen;Y. Wei;L. Zhang;J. Zhang;M. Chan
中科院分区：
文献类型：
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作者：
J. He;W. Bian;Y. Chen;Y. Wei;L. Zhang;J. Zhang;M. Chan
本文提出了长通道未掺杂（轻掺杂）超薄体绝缘体上硅（UTB-SOI） mosfet的严格的基于载流子的分析模型。它是基于泊松-玻尔扎曼方程的精确解耦合到具有后界面氧化层效应的电流连续性方程。所建立的模型是连续的，适用于所有UTB-SOI MOSFET工作区域（线性、饱和、亚阈值和强反转区域），并跟踪不同区域之间的过渡。通过与二维仿真器产生的长通道结果的比较，验证了该初步模型的正确性。在所有栅极和漏极电压范围内，所预测的I-V特性也与二维数值模拟结果吻合较好，证明了分析模型的有效性。这些都表明，如果将量子力学效应、掺杂谱效应、短沟道效应和多耗竭效应等二阶效应适当地整合到该模型中，该模型将成为UTB MOSFET紧凑建模的理想核心模型。
This paper, presents a rigorous carrier-based analytic model for the long channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the exact solution of the Poisson–Boltzamann equation coupled to the current continuity equation with the back interface oxide layer effect. The developed model is continuous and valid for all UTB-SOI MOSFET operation regions (linear, saturation, sub-threshold and strong inversion region) and traces the transition between different regions. This preliminary model has been verified by comparing with long channel results generated by 2D simulator. The predicted I–V characteristics also show in a good agreement with 2D numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET compact modelling if the appropriate second-effects such as quantum mechanical effect, doping profile effect, short-channel effects and poly-depletion effect are integrated into it.