Defect-induced magnetic structure in (Ga1-xMnx)As -: art. no. 187202
Defect-induced magnetic structure in (Ga1-xMnx)As -: art. no. 187202
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DOI：
10.1103/physrevlett.88.187202
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发表时间：
2002-05-06
影响因子：
8.6
通讯作者：
Eriksson, O
中科院分区：
文献类型：
--
作者：
Korzhavyi, PA;Abrikosov, IA;Eriksson, O
我们表明，当 Ga 亚晶格上存在 As 缺陷时，与完美铁磁有序的情况相比，涉及 (Ga1-x Mn-x )As 中 Mn 原子局部磁矩部分无序的磁结构降低了总能量。人们发现这种磁性结构对于一定浓度的 As 反位点是稳定的，并且该结果解释了在 (Ga1-x Mn-x )As 中观察到的磁矩和临界温度。我们提出了对部分无序磁结构稳定性的解释，并得出结论：磁化强度和临界温度应通过减少 As 反位缺陷的数量而大幅增加。
We show that magnetic structures involving partial disorder of local magnetic moments on the Mn atoms in (Ga1-x Mn-x )As lower the total energy, compared to the case of perfect ferromagnetic ordering, when As defects on the Ga sublattice are present. Such magnetic structures are found to be stable for a range of concentrations of As antisites, and this result accounts for the observed magnetic moments and critical temperatures in (Ga1-x Mn-x )As . We propose an explanation for the stabilization of the partially disordered magnetic structures and conclude that the magnetization and critical temperatures should increase substantially by reducing the number of As antisite defects.