Single-dot spectroscopy of boron and phosphorus codoped silicon quantum dots
Single-dot spectroscopy of boron and phosphorus codoped silicon quantum dots
复制标题
DOI：
10.1063/1.4965986
复制
发表时间：
2016-10
影响因子：
3.2
通讯作者：
T. Kanno;H. Sugimoto;A. Fučíková;J. Valenta;M. Fujii
中科院分区：
文献类型：
--
作者：
T. Kanno;H. Sugimoto;A. Fučíková;J. Valenta;M. Fujii
硼(B)和磷(P)共掺的硅量子点可以分散在不含有机配体的极性溶剂中，由于施主和受主之间的电子跃迁，其光致发光(PL)在0.85-1.85 eV之间可控。我们研究了共掺硅量子点在室温和77K下的光致发光光谱，结果表明，共掺胶体硅量子点(半高宽大于400 meV)的宽发光带是由具有不同光致发光能量的单个量子点的较窄的光致发光带组成的。我们还发现，单个共掺杂的Si量子点的光致发光线宽几乎是未掺杂的Si量子点的两倍。与未掺杂的Si量子点的线宽在低温下显著变窄不同，共掺杂的Si量子点的线宽几乎不受温度的影响，只有极少数很小的量子点除外。这些结果表明，在一个量子点中掺杂了大量的B和P，并且在每个量子点中存在多个不同的发光中心。
Boron (B) and phosphorous (P) codoped silicon quantum dots (Si QDs) are dispersible in polar solvents without organic ligands, and exhibit size controllable photoluminescence (PL) from 0.85 to 1.85 eV due to the electronic transitions between the donor and the acceptor states. We study the PL spectra of the codoped Si QDs at room temperature and at 77 K. We show that the broad PL band of codoped colloidal Si QDs (full width at half maximum is over 400 meV) is composed of narrower PL bands of individual QDs with different PL energies. We also show that the PL linewidth of individual codoped Si QDs is almost twice as large as those of undoped Si QDs. In contrast to the significant narrowing of the PL linewidth of undoped Si QDs at low temperatures, that of codoped Si QDs is almost independent of the temperature except for a few very small QDs. These results suggest that a large number of B and P are doped in a QD and there are a number of non-identical luminescence centers in each QD.