Micropatterning of sandwiched FeCuNbSiB/Cu/FeCuNbSiB for the realization of magneto-impedance microsensors
Micropatterning of sandwiched FeCuNbSiB/Cu/FeCuNbSiB for the realization of magneto-impedance microsensors
复制标题
用于实现磁阻抗微传感器的夹层 FeCuNbSiB/Cu/FeCuNbSiB 微图案化
DOI：
10.1007/s00542-011-1294-y
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
F. Alves
中科院分区：
文献类型：
--
作者：
J. Moulin;M. Woytasik;I. Shahosseini;F. Alves
本工作提出了基于磁阻抗现象的磁场微传感器的制作，并致力于NDC应用。铁磁/导电/铁磁多层结构由夹在两层Finemet®合金膜之间的铜层组成。后者最初是一种非晶材料，通过热处理进行纳米晶化。制造过程中进行了优化，以尽量减少结晶度和诱导横向各向异性。由剥离和溅射工艺引起的工艺缺陷改变了传感器的磁阻抗特性。消除这些缺陷允许传感器在30 MHz下达到1,200 V/T/A的灵敏度，偏置场大于各向异性场，并且没有滞后。灵敏度的角度依赖性表明传感器仅对磁场的轴向分量敏感。
This work presents the fabrication of magnetic field microsensors based on the magneto-impedance phenomenon and dedicated to NDC applications. The multilayer structure, ferromagnetic/conductive/ferromagnetic, is composed of a copper layer sandwiched with two Finemet®alloy films. The later, initially an amorphous material, is nanocrystallized by heat treatment. The fabrication process has been optimized in order to minimize coercivity and induce transversal anisotropy. The technological defects induced by the lift-off and sputtering processes change the magneto-impedance properties of the sensors. Eliminating these defects permits the sensor to reach to a sensitivity of 1,200 V/T/A at 30 MHz with a bias field larger than the anisotropy field and without hysteresis. The angular dependence of the sensitivity shows that the sensor is only sensitive to the axial component of the magnetic field.