Multicarrier Multipactor Analysis Based on Branching Levy Walk Hypothesis
Multicarrier Multipactor Analysis Based on Branching Levy Walk Hypothesis
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基于分支Levy行走假设的多载波多重因子分析
DOI：
10.2528/pier14022202
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发表时间：
2014
影响因子：
6.7
通讯作者：
Ran, Lixin
中科院分区：
文献类型：
--
作者：
Cui, Wangzhao;Wang, Zhiyu;Shen, Yichen;Ran, Lixin
本文提出了一种随机方法，用于分析高功率真空微波器件中多载波二次电子倍增放电，其中电场分布不均匀。我们指出，大量的二次电子在微放电过程中的统计行为可以很好地描述概率随机行走和Levy行走理论。根据导出的均匀场中二次电子横向散射的概率密度，可以解析地计算非均匀场中的多载流子倍增效应，从而大大提高了计算效率。作为演示，给出了在矩形波导中支持TE_（10）模的多载流子多重碰撞的二次电子积累。理论计算结果与耗时的粒子模拟结果吻合较好，其斜率差小于0.8%，而计算时间仅减少一个数量级。据我们所知，这是第一次从理论上推导出二次电子在多重碰撞中的横向散射几率密度。该密度描述了多载流子微放电过程中二次电子统计运动的物理图像，可广泛应用于大功率电子学和电磁学领域。
In this paper, we propose a stochastic approach for the analytical analysis of the multicarrier multipactor discharge occurring in high-power vacuum microwave devices, in which electric flelds are not homogeneously distributed. We indicate that the statistical behavior of large amount of secondary electrons in the process of a multipactor discharge can be well described by the probabilistic random walk and Levy walk theory. Based on the derived probability density of the lateral difiusion of secondary electrons in homogeneous flelds, the multicarrier multipaction in inhomogeneous flelds can be analytically computed with signiflcantly enhanced e-ciency. As a demonstration, the accumulation of secondary electrons of a multicarrier multipaction in a rectangular waveguide supporting TE10 mode is given. The theoretical results comply well with the results achieved by the time-consuming particle simulation, the slope difierence of which is less than 0.8%, while only costs one-order less computational time. To the best of our knowledge, this is the flrst time that the probability density of the lateral difiusion of secondary electrons during a multipaction is theoretically derived. This density depicts the physical picture of the statistical movement of secondary electrons during the process of a multicarrier multipactor, which can be widely used in the areas of high-power electronics and electromagnetism.
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影响因子：
64.8
作者：
Humphries, Nicolas E.;Queiroz, Nuno;Sims, David W.
通讯作者：
Sims, David W.
影响因子：
2.2
作者：
V. Semenov;A. Kryazhev;D. Anderson;M. Lisak
通讯作者：
V. Semenov;A. Kryazhev;D. Anderson;M. Lisak
DOI：
10.1016/s0016-0032(34)90415-4
发表时间：
1934-10
影响因子：
4.1
作者：
P. T. Farnsworth
通讯作者：
P. T. Farnsworth
影响因子：
0.9
作者：
M. Shlesinger;J. Klafter;G. Zumofen
通讯作者：
M. Shlesinger;J. Klafter;G. Zumofen
DOI：
10.1103/physrevstab.5.124404
发表时间：
2002-12-01
影响因子：
--
作者：
Furman, MA;Pivi, MTF
通讯作者：
Pivi, MTF