Raman Scattering for Probing Semiconductor Nanocrystal Arrays with a Low Areal Density
Raman Scattering for Probing Semiconductor Nanocrystal Arrays with a Low Areal Density
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DOI：
10.1021/jp210720v
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发表时间：
2012-08-16
影响因子：
3.7
通讯作者：
Zahn, Dietrich R. T.
中科院分区：
文献类型：
--
作者：
Milekhin, Alexander G.;Yeryukov, Nikolay A.;Zahn, Dietrich R. T.
我们提出了一个共振和表面增强拉曼散射的纳米晶体阵列（硫化镉CdS，硒化铅PbSe，氧化锌ZnO）与不同的面密度制造的朗缪尔-Blodgett技术和胶体化学的研究。通过调节激光能量使其与带间跃迁的能量相匹配，实现了NC阵列的横向、纵向和表面光学（TO、LO和SO）声子及其九阶泛音的共振拉曼散射.共振增强允许测量来自具有低面密度（低至每1 μ m（2）10个PbSe NC）的NC阵列的拉曼响应。由于共振表面增强拉曼散射效应，在低面密度的CdS NC阵列中，LO和SO模的拉曼散射增强了约730倍。
We present a study of resonant and surface enhanced Raman scattering by arrays of nanocrystals (cadmium sulfide CdS, lead selenide PbSe, and zinc oxide ZnO) with various areal density fabricated by using the Langmuir-Blodgett technique and colloidal chemistry. Resonant Raman scattering by transverse, longitudinal, and surface optical (TO, LO, and SO) phonons and their overtones up to ninth order was achieved for nanocrystal (NC) arrays by adjusting the laser energy to that of the interband transitions. The resonance enhancement allowed a Raman response from arrays of NCs with a low areal density (down to 10 PbSe NCs per 1 mu m(2)) to be measured. An enhancement of Raman scattering by LO and SO modes in CdS NC arrays with a low areal density by a factor of about 730 was achieved due to the resonant surface enhanced Raman scattering effect.