(Invited) Sputter Growth of Chalcogenide Superlattice Films for Future Phase Change Memory Applications
(Invited) Sputter Growth of Chalcogenide Superlattice Films for Future Phase Change Memory Applications
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（特邀）面向未来相变存储器应用的硫族化物超晶格薄膜的溅射生长
DOI：
10.1149/08603.0049ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Tominaga Junji
中科院分区：
文献类型：
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作者：
Saito Yuta;Mitrofanov Kirill V;Makino Kotaro;Miyata Noriyuki;Fons Paul;Kolobov Alexander V.;Tominaga Junji
Ge-Sb-Te三元合金是相变随机存储器（PCRAM）的关键材料。在PCRAM中，数据记录依赖于通过电脉冲诱导焦耳加热在非晶相和晶相之间的可逆切换。我们提出并开发了GeTe/Sb 2 Te 3超晶格相变存储器，也被称为界面相变存储器（iPCM），并已证明了开关能量的显着降低和更长的耐久性相比，从传统的合金型相变存储器制造的设备。在这项工作中，我们讨论了层状硫属化物薄膜的生长机制，并提出了未来相变存储器应用的最佳生长条件。
Ge-Sb-Te ternary alloys are key materials for phase-change random access memory (PCRAM). In PCRAM, data recording relies on reversible switching between the amorphous and crystalline phases by means of electrical pulse induced Joule heating. We proposed and developed GeTe/Sb2Te3 superlattice phase change memory, also known as interfacial phase change memory (iPCM), and have demonstrated a significant reduction in switching energy and much longer endurance compared to devices fabricated from conventional alloy-type phase change memory. In this work, we discuss the growth mechanisms of layered chalcogenide films and propose optimal growth conditions for future phase change memory applications.