Structural and lasing characteristics of ultrathin hexagonal ZnO nanodisks grown vertically on silicon-on-insulator substrates

Structural and lasing characteristics of ultrathin hexagonal ZnO nanodisks grown vertically on silicon-on-insulator substrates
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DOI:
10.1063/1.2779094
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发表时间:
2007-08
影响因子:
4
通讯作者:
Dingshan Yu;Yujie Chen;Baojun Li;Xudong Chen;Mingqiu Zhang;F. Zhao;S. Ren
Dingshan Yu;Yujie Chen;Baojun Li;Xudong Chen;Mingqiu Zhang;F. Zhao;S. Ren
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Dingshan Yu;Yujie Chen;Baojun Li;Xudong Chen;Mingqiu Zhang;F. Zhao;S. Ren

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在无催化剂的情况下,采用气相传输法在绝缘体上硅衬底上生长了异质性ZnO纳米盘。所得的纳米盘具有纳米厚度(10- 20 nm),并且大多数在基底表面上呈现垂直取向。在光激发下,这些纳米盘在室温下表现出紫外激光发射,激发阈值为205μ Jscincm ~ 2,发射寿命为2 ps。详细的激光分析表明,耳语画廊模式激光可能发生在ZnO纳米盘。
Hexagonal ZnO nanodisks were grown on silicon-on-insulator substrates by vapor-transport method without catalysts. The resulting nanodisks possess ultrathin thickness (10–20nm) and most of them present vertical orientation on the substrate surface. Under optical excitation, these ultrathin nanodisks exhibit ultraviolet lasing emission with the excitation threshold of 205μJ∕cm2 and emission lifetime of 2ps at room temperature. The detailed lasing analysis indicates that whispering-gallery-mode lasing may occur in the ZnO nanodisks.