Amorphous ternary Ta-Si-N diffusion barrier between Si and Au
Amorphous ternary Ta-Si-N diffusion barrier between Si and Au
复制标题
Si 和 Au 之间的非晶三元 Ta-Si-N 扩散势垒
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
R. Ruiz
中科院分区：
文献类型：
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作者：
P. Pokela;E. Kolawa;M. Nicolet;R. Ruiz
本文报道了反应溅射 Ta-Si-N 薄膜，该薄膜被研究为硅层和金层之间的扩散势垒。对浅 n{sup +}p 结二极管的反向散射光谱分析和电学测量表明，约 100 nm 厚的非晶 Ta{sub 36}Si{sub 14}N{sub 50} 薄膜非常有效地保持了浅结上金属化的完整性，在真空中 750{°C 下退火长达 30 分钟。 （Au-Si 共晶温度为 360{°C}）。在该温度下，金覆盖层中会出现小开口，但不会影响二极管的电气特性。在较高温度下会发生破坏性冶金相互作用，导致浅结二极管短路。
This paper reports on reactively sputtered Ta-Si-N films that are investigated as diffusion barriers between silicon and Au layers. Analyses by backscattering spectrometry and electrical measurements on shallow n{sup +}p junction diodes reveal that an amorphous Ta{sub 36}Si{sub 14}N{sub 50} thin film approximately 100 nm thick very effectively preserves the integrity of the metallization on shallow junctions up to 30 min annealing at 750{degrees} C in vacuum. (The Au-Si eutectic is at 360{degrees} C). At that temperature small openings appear in the Au overlayer which do not, however, affect the electrical characteristics of the diodes. Destructive metallurgical interactions occur at higher temperatures causing a shorting of the shallow junction diodes.