Many-body exchange-correlation effects in the lowest subband of semiconductor quantum wires.
Many-body exchange-correlation effects in the lowest subband of semiconductor quantum wires.
复制标题
半导体量子线最低子带中的多体交换相关效应。
DOI：
10.1103/physrevb.48.5469
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
S. D. Sarma
中科院分区：
文献类型：
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作者：
Ben Yu;S. D. Sarma
我们从理论上考虑了准一维 GaAs 量子线结构最低子带中电子-电子相互作用引起的交换相关效应。我们在前阶动态屏蔽近似（即所谓的电子气理论的 GW 近似）内计算电子自能、谱函数、动量分布函数、非弹性散射率、带隙重整化和零温度和有限温度下的多体重整化因子，以及有和没有杂质散射效应。我们还计算了有限温度和有限杂质散射对多体特性的影响。我们提出了一种具有大负微分电阻的热电子晶体管器件的可能性，该器件基于一维高能弹道电子突然发生的等离子体发射。根据我们的数值结果，批判性地讨论了相互作用的一维量子线电子之间费米面是否存在的问题。
We consider theoretically the electron-electron-interaction-induced exchange-correlation effects in the lowest subband of quasi-one-dimensional GaAs quantum-wire structures. We calculate, within the leading-order dynamical-screening approximation (i.e., the so-called GW approximation of the electron-gas theory), the electron self-energy, spectral function, momentum distribution function, inelastic-scattering rate, band-gap renormalization, and the many-body renormalization factor at both zero and finite temperatures, and both with and without impurity-scattering effects. We also calculate the effects of finite temperatures and finite impurity scattering on the many-body properties. We propose the possibility of a hot-electron transistor device with a large negative differential resistance which is based on the sudden onset of plasmon emission by energetic ballistic electrons in one dimension. The issue of the existence or nonexistence of the Fermi surface among the interacting one-dimensional quantum-wire electrons is critically discussed based on our numerical results.