High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si
High thermal stability and low electrical resistivity carbon-containing Cu film on barrierless Si
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DOI：
10.1063/1.3427408
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发表时间：
2010-05
影响因子：
4
通讯作者：
L. Nie;X. Li;J. Chu;Qingyi Wang;Chun-Hung Lin;C. Dong
中科院分区：
文献类型：
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作者：
L. Nie;X. Li;J. Chu;Qingyi Wang;Chun-Hung Lin;C. Dong
研究了不同退火温度和退火时间下掺碳铜薄膜的界面结构和电导率。采用磁控溅射法在无势垒硅衬底上制备了薄膜。退火后，晶粒生长明显受阻，在膜/基界面形成了一层含碳纳米厚的钝化非晶层。在400 °C下退火1小时后，膜具有约2.7 μΩ cm的电阻率，并且即使在400 °C下退火9小时后仍保持3.8 μΩ cm的低电阻率。低电阻率与高热稳定性的组合使得碳掺杂成为未来无阻挡层Si上的Cu互连的有前途的技术。
Interfacial structures and electrical resistivities of a carbon-doped Cu film at different annealing temperatures and times were investigated. The film was prepared by magnetron sputtering on barrierless silicon. After annealing, grain growth was distinctly hindered and a carbon-containing nanometer thick passive amorphous layer was formed at the film/substrate interface. The film had a resistivity of about 2.7 μΩ cm after annealing at 400 °C for 1 h and maintained a low resistivity of 3.8 μΩ cm even after 9 h annealing at 400 °C. The low electrical resistivity in combination with the high thermal stability makes carbon doping a promising technique for future Cu interconnects on barrierless Si.