Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
复制标题
DOI：
10.1021/nl502603d
复制
发表时间：
2014-11-01
期刊：
影响因子：
10.8
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Yang, Lingming;Majumdar, Kausik;Ye, Peide D.
低电阻率金属-半导体（M-S）接触是二维过渡金属二硫化物（TMD）研究的紧迫挑战之一。在这里，我们报告了一种氯化物分子掺杂技术，该技术大大降低了少层 WS2 和 MoS2 中的接触电阻（R-c）。掺杂后，WS2和MoS2的R-c分别降低至0.7k Omega中心点μm和0.5k Omega中心点μm。 R-c 的显着减小归因于所实现的高电子掺杂密度，从而显着减小了肖特基势垒宽度。作为概念验证，展示了高性能少层 WS2 场效应晶体管 (FET)，其具有 380 mu A/mu m 的高漏极电流、4 x 10(6) 的开/关比以及 60 cm(2)/(V.s) 的峰值场效应迁移率。这种掺杂技术提供了一种高度可行的途径来降低 TMD 中的 Rc，为高性能 2D 纳米电子器件铺平了道路。
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (R-c) in the few-layer WS2 and MoS2. After doping, the R-c of WS2 and MoS2 have been decreased to 0.7 k Omega center dot mu m and 0.5 k Omega center dot mu m, respectively. The significant reduction of the R-c is attributed to the achieved high electron-doping density, thus a significant reduction of Schottky barrier width. As a proof-of-concept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 mu A/mu m, an on/off ratio of 4 x 10(6), and a peak field-effect mobility of 60 cm(2)/(V.s). This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nanoelectronic devices.