Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
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DOI：
10.1021/acsanm.1c01504
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发表时间：
2021-09-08
影响因子：
5.9
通讯作者：
Bondino, Federica
中科院分区：
文献类型：
--
作者：
Krbal, Milos;Prokop, Vit;Bondino, Federica
二维过渡金属二硫属化合物（TMDCs）具有很强的应用潜力。为了实现这一目标，化学计量比的二维TMDCs的大规模合成是至关重要的。在这里，我们考虑一个典型的TMDC的代表，二硫化钼，并提出了一种方法，通过在800摄氏度下退火，这是在长程和短程订单方面进行了研究，通过结晶的薄的非晶层的有序结晶薄膜的制造。强的层状MoS2沿着< 002 >晶面从沉积的3D非晶相的择优晶体生长进行了讨论，连同使用维也纳从头算模拟包的分子动力学模拟所揭示的结晶过程的机制。我们相信，所得结果可以推广到材料。所提出的方法展示了一种简单而有效的方法来制造薄的二维TMDC在纳米和光电器件中的应用。
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS2, and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 degrees C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS2 along the < 002 > crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nano-and optoelectronic devices.