Doping sites observation of deep-level impurities in hyperdoped silicon via high-resolution transmission electron microscopy
Doping sites observation of deep-level impurities in hyperdoped silicon via high-resolution transmission electron microscopy
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通过高分辨率透射电子显微镜观察超掺杂硅中深层杂质的掺杂位点
DOI：
10.1016/j.jallcom.2019.07.252
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发表时间：
2019-10
影响因子：
6.2
通讯作者：
Wenbin Yang
中科院分区：
文献类型：
--
作者：
Cai Wen;Zhongqi Shi;Wenbin Yang
直接观察超掺杂硅中深能级杂质的掺杂位置对于确定不同超掺杂工艺或热退火条件下的杂质扩散、分布和沉淀是必不可少的。这对于澄清可以改善杂质电活性的机制的功能至关重要。然而，这种观察，这通常是通过使用高分辨率透射电子显微镜（HRTEM）进行，是有限的，在显微镜成像条件，如显微镜分辨率，物镜透镜的散焦，试样厚度，和投影取向的试样（即区轴）的一些限制。因此，为了消除这些限制，传统的场发射枪HRTEM图像结合图像处理（反卷积）进行了研究，以获得原子分辨率的结构图像。硅中氧、硫族元素（硫和硒）和过渡金属（钛和钴）杂质的替代和间隙掺杂位置通过图像对比分析来确定。最后，确定了直接观察掺杂位置的有利条件。
The direct observation of the doping sites of deep-level impurities in hyperdoped silicon is essential to determine the impurity diffusion, distribution, and precipitation via different hyperdoping processes or thermal annealing conditions. This is crucial to clarify the functioning of a mechanism, which can improve the impurity electroactivity. However, this observation, which is usually performed by using high-resolution transmission electron microscopy (HRTEM), is limited by some restrictions in the microscopic imaging conditions, such as the microscope resolution, the defocus of the objective lens, the specimen thickness, and the projected orientation of the specimen (i.e. the zone axis). Therefore, to eliminate these restrictions, conventional field-emission-gun HRTEM images in combination with image processing (deconvolution) were investigated in order to obtain structure images with atomic resolution. Both the substitutional and the interstitial doping sites of oxygen, chalcogen (sulfur and selenium), and transition metal (titanium and cobalt) impurities in silicon were determined by image contrast analysis. Finally, the favorable conditions for the direct observation of doping sites were defined.
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影响因子：
4
作者：
Kay-Michael Guenther;T. Gimpel;S. Kontermann;W. Schade
通讯作者：
Kay-Michael Guenther;T. Gimpel;S. Kontermann;W. Schade
影响因子：
2.8
作者：
C. Wen
通讯作者：
C. Wen
影响因子：
4
作者：
A. Ourmazd;W. Tsang;J. Rentschler;D. W. Taylor
通讯作者：
A. Ourmazd;W. Tsang;J. Rentschler;D. W. Taylor
影响因子：
4.1
作者：
Wenjie Yang;J. Mathews;James S. Williams
通讯作者：
Wenjie Yang;J. Mathews;James S. Williams
DOI：
10.1002/pssa.201026459
发表时间：
2010-12
期刊：
physica status solidi (a)
影响因子：
--
作者：
F. H. Li
通讯作者：
F. H. Li