High‐frequency surface acoustic wave filter based on diamond thin film
High‐frequency surface acoustic wave filter based on diamond thin film
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DOI：
10.1002/pssa.201000064
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发表时间：
2011-05
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影响因子：
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通讯作者：
S. Fujii
中科院分区：
文献类型：
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作者：
S. Fujii
本文概述了高频应用金刚石表面声波（SAW）器件开发的最新进展。我们已经研究了基于金刚石薄膜的高频SAW滤波器或谐振器，并证明金刚石薄膜在3 GHz以上的SAW应用中具有很大的潜力。阐明了高频应用中SAW滤波器所需的金刚石薄膜特性。数值计算结果表明，采用LiNbO 3薄膜作为压电材料的金刚石基声表面波器件具有较高的电耦合系数和超过12 000 m/s的相速度。与使用AlN薄膜作为压电材料时相比，使用SiO2/叉指换能器/AlN/金刚石结构使得SAW器件对于3GHz以上的应用具有低插入损耗。
This paper gives an overview of recent progress in developing diamond surface acoustic wave (SAW) devices for high‐frequency applications. We have studied high‐frequency SAW filters or resonators based on diamond thin films and demonstrated that diamond thin films have much potential for SAW applications above 3 GHz. Diamond film characteristics required for SAW filters in high‐frequency applications are clarified. The results of numerical calculations reveal that the diamond‐based SAW device, which employs a LiNbO3 thin film as the piezoelectric material, can provide a high electric coupling factor as well as a high phase velocity of more than 12 000 m/s. In contrast to when an AlN thin film is used as the piezoelectric material, the use of a SiO2/interdigital transducer/AlN/diamond structure enables the SAW device to have a low insertion loss for applications above 3 GHz.