Capping of rare earth silicide nanowires on Si(001)
Capping of rare earth silicide nanowires on Si(001)
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DOI：
10.1063/1.4939693
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发表时间：
2016-01-04
影响因子：
4
通讯作者：
Daehne, Mario
中科院分区：
文献类型：
--
作者：
Appelfeller, Stephan;Franz, Martin;Daehne, Mario
The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along {111} lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires. (C) 2016 AIP Publishing LLC.
