The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters
The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters
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SiC 共源共栅 JFET 在电动汽车牵引逆变器中的潜力
DOI：
10.1109/tte.2019.2954654
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发表时间：
2019
影响因子：
7
通讯作者：
O. Alatise
中科院分区：
文献类型：
--
作者：
R. Wu;J. González;Z. Davletzhanova;P. Mawby;O. Alatise
在电动汽车（EV）动力系统中实施碳化硅（SiC）器件的好处已在各种研究中得到广泛报道。新一代SiC器件包括平面MOSFET、沟槽MOSFET以及最近的共源共栅JFET，已由各制造商发布。SiC共源共栅器件包括用于栅极驱动的低压硅MOSFET和用于电压阻断的高压耗尽型SiC JFET。这些器件特别令人感兴趣，因为它们避免了导致阈值电压漂移的SiC栅极氧化物陷阱的已知可靠性问题。在这篇文章中，电动汽车动力系统模拟使用各种SiC器件，包括650 V的沟槽，900 V的平面，和650 V的共源共栅JFET的传导和开关能量的实验测量。与以前的文章中使用基于MEMS参数的模型计算损耗不同，这里使用不同电流和温度下功率器件的静态和动态测量值来计算模拟驾驶循环中的损耗。场截止IGBT也进行了评估。三相2电平逆变器模型通过考虑损耗的测量温度依赖性来进行建模，并使用从温度表导出的精确热网络。转换器的效率和热性能进行了比较，为每种设备技术。结果表明，SiC共源共栅结型场效应晶体管在电动汽车动力系统中具有很大的应用潜力。
The benefits of implementing silicon carbide (SiC) devices in electric vehicle (EV) powertrains have been widely reported in various studies. New generations of SiC devices including planar MOSFETs, trench MOSFETs, and more recently, cascode JFETs have been released by various manufacturers. SiC cascode devices comprise low-voltage silicon MOSFETs for gate driving and high-voltage depletion mode SiC JFETs for voltage blocking. These devices are particularly interesting, because they avoid the known reliability issues of SiC gate oxide traps resulting in threshold voltage drifts. In this article, an EV powertrain is simulated using experimental measurements of conduction and switching energies of various SiC devices including 650-V trench, 900-V planar, and 650-V cascode JFETs. Unlike in previous articles where losses are calculated using models based on datasheet parameters, here static and dynamic measurements on power devices at different currents and temperatures are used to calculate losses over simulated driving cycles. Field-stop IGBTs are also evaluated. The 3-phase, 2-level inverter model is electrothermal by accounting for the measured temperature dependence of the losses and uses accurate thermal networks derived from datasheets. The converter efficiency and the thermal performance are compared for each device technology. The results show that SiC cascode JFETs have great potential in EV powertrain applications.