Effects of Mg on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors
Effects of Mg on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors
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DOI：
10.1063/1.3567533
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发表时间：
2011-03-21
影响因子：
4
通讯作者：
Garfunkel, Eric
中科院分区：
文献类型：
--
作者：
Ku, Chieh-Jen;Duan, Ziqing;Garfunkel, Eric
研究了Mg组分（x=0，0.06和0.10）对MgxZn 1-xO薄膜晶体管（TFT）电学特性和热稳定性的影响。Mg_（0.06）Zn_（0.94）O薄膜晶体管具有最小的亚阈值斜率和最高的场效应迁移率。X射线光电子能谱测量的O-1 s谱表明，相对于纯ZnO沟道器件，Mg0.06Zn0.94O中的氧空位减少。Mg0.06Zn0.94O薄膜晶体管也表现出更高的热稳定性相比，纯ZnO薄膜晶体管，这主要是由于在沟道中的氧空位的抑制。(c)2011年美国物理学会。[doi：10.1063/1.3567533]
The effects of the Mg composition (x=0, 0.06, and 0.10) on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors (TFTs) are investigated. The Mg0.06Zn0.94O TFT shows the smallest subthreshold slope and highest field effect mobility. The O-1s spectra of x-ray photoelectron spectroscopy measurements indicate that the oxygen vacancies are reduced in Mg0.06Zn0.94O relative to a pure ZnO channel device. Mg0.06Zn0.94O TFTs also show higher thermal stability compared to the pure ZnO TFTs, which is mainly attributed to the suppression of oxygen vacancies in the channel. (c) 2011 American Institute of Physics. [doi:10.1063/1.3567533]