199-MHz Polysilicon Micromechanical Disk Array-Composite Oscillator
199-MHz Polysilicon Micromechanical Disk Array-Composite Oscillator
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DOI：
10.1109/ifcs-isaf41089.2020.9234862
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发表时间：
2020-07
期刊：
影响因子：
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通讯作者：
Qianyi Xie;S. Afshar;A. Ozgurluk;C. Nguyen
中科院分区：
文献类型：
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作者：
Qianyi Xie;S. Afshar;A. Ozgurluk;C. Nguyen
使用应力缓冲阵列复合材料的六个$13.4-\mu \mathrm{m}$半径的电容间隙转换的径向轮廓模式多晶硅微机械盘谐振器与36.1纳米电极谐振器的间隙，使皮尔斯振荡器中心在199.2 MHz的相位噪声标记为−104.7dBc/Hz在1 kHz的偏移和−149.6dBc/Hz远离载波，足够的智能手机。12-kHz至20-MHz的综合抖动为163.3fs，从而产生-251dB的出色抖动FoM。该演示的关键是使用$\lambda$耦合器来影响阵列端子之间的0°相移;以及无电极谐振器来缓冲制造后应力的影响，否则当间隙非常小时，可能会使磁盘与电极短路。
The use of a stress-buffered array-composite of six $13.4-\mu \mathrm{m}$ radius capacitive-gap transduced radial-contour mode polysilicon micromechanical disk resonators with 36.1-nm electrode-to-resonator gaps has enabled a Pierce oscillator centered at 199.2 MHz with phase noise marks of −104.7dBc/Hz at 1-kHz offset and −149.6dBc/Hz far from the carrier, sufficient for smartphones. The 12-kHz to 20-MHz integrated jitter is 163.3fs, which yields an excellent jitter FoM of −251dB. The key to this demonstration is the use of $\lambda$ couplers to affect a 0° phase shift across the array terminals; and electrodeless resonators to buffer the effect of post-fabrication stress that otherwise might short disks to their electrodes when gaps are very small.