Novel MEMS 900 MHz electrostatic silicon delay line
Novel MEMS 900 MHz electrostatic silicon delay line
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新型 MEMS 900 MHz 静电硅延迟线
DOI：
10.1109/icsens.2010.5690425
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
D. Saab
中科院分区：
文献类型：
--
作者：
M. Tabib;K. Alzoubi;D. Saab
我们报告的设计，制造和操作的硅声延迟线适用于低电压（1-5 V）和高频（10 MHz-10 GHz）的操作和信号处理和横向滤波器的实施。这些延迟线中的声波是使用周期性电极静电产生的，该周期性电极通过1-20 nm的气隙耦合到多晶硅区域的板。使用沿沿着多晶硅板距第一阵列0.7 cm的直流偏置的相同电极阵列检测传播的声波。根据偏置条件，我们的器件在301 MHz或903 MHz（三次谐波）谐振。
We report design, fabrication and operation of a silicon acoustic delay line suitable for low voltage (1–5 V) and high-frequency (10 MHz-10 GHz) operations and implementation of signal processing and transversal filters. The acoustic waves in these delay lines were generated electrostatically using a periodic electrode that was coupled through a 1–20 nm air-gap to a slab of a polysilicon region. The propagating acoustic waves were detected using a dc-biased identical electrode array situated 0.7 cm away from the first array along the polysilicon slab. Depending on biasing conditions, our devices resonated at 301 MHz or at 903 MHz (the third harmonic).