Large area few-layer TMD film growths and their applications
Large area few-layer TMD film growths and their applications
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DOI：
10.1088/2515-7639/ab82b3
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发表时间：
2020-04-01
影响因子：
4.8
通讯作者：
Drndic, Marija
中科院分区：
文献类型：
--
作者：
Mandyam, Srinivas V.;Kim, Hyong M.;Drndic, Marija
二维材料的研究是现代凝聚态物理的核心课题之一。由于石墨烯的实验分离，人们对这些材料独特的光学、电子和结构性质给予了极大的关注。在过去的几年里，半导体过渡金属二卤代化合物(TMD)由于具有直接带隙和本质上破坏反转对称性等性质，引起了人们越来越多的兴趣。这些性质的实际应用需要大面积的合成。虽然目前石墨烯薄膜的合成已经达到了平方米量级，但由于其生长动力学的复杂性，TMDs很难取得类似的成就。本文概述了单层和少层TMDs薄膜的合成方法，比较了不同生长策略的空间和时间尺度。特别强调了这种大规模实现在电子和光学等领域所带来的独特应用。
Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono- and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.