Preparation of epitaxial La_1−xSr_xMnO_3 films on SrTiO_3(001) by dipping-pyrolysis process
Preparation of epitaxial La_1−xSr_xMnO_3 films on SrTiO_3(001) by dipping-pyrolysis process
复制标题
浸渍热解法在SrTiO_3(001)上制备外延La_1−xSr_xMnO_3薄膜
DOI：
10.1557/jmr.1997.0077
复制
发表时间：
1997
影响因子：
2.7
通讯作者：
T. Kumagai
中科院分区：
文献类型：
--
作者：
T. Manabe;I. Yamaguchi;W. Kondo;S. Mizuta;T. Kumagai
以金属环烷酸盐为原料，采用浸渍-热解法在SrTiO 3（001）衬底上制备了La 1 − xSrxMnO 3（LSMO）（x = 0−0.3）薄膜。通过在800-1200 °C下热处理获得外延生长的LSMO膜;通过非对称X射线衍射的倒易空间映射评估，这些膜的取向波动明显小，与衬底的取向波动相当。x = 0.1 - 0.3的LSMO膜在25-300 K下表现出金属导电行为，并且电阻率与LSMO单晶一样低，例如，4.5对于x = 0.3的薄膜，150 K时为× 10^−4 Ω · cm。
La_1− x Sr_ x MnO_3 (LSMO) ( x = 0−0.3) films were prepared on SrTiO_3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10^−4 Ω · cm at 150 K for the film with x = 0.3.