Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector
Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector
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用于 ATLAS 内部探测器光学读数的光电元件的辐射硬度
DOI：
10.1016/j.nima.2010.04.098
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H.P.Yoshida
中科院分区：
文献类型：
--
作者：
S.Hou;K.Ishii;M.Itoh;Y.Sakemi;D.S.Su;T.T.Su;P.K.Teng;H.P.Yoshida
在大型强子对撞机（LHC）的辐射危害环境中，光学链路用于ATLAS内部探测器的数据传输。本文研究了GaAs VCSEL和外延Si PIN光电子器件在CYRIC上的30和70MeV质子辐照耐受性。高速硅和GaAs PIN光电二极管也被研究升级到超级LHC。研究了电荷注入GaAs VCSEL的退火特性。GaAs器件显示出近似线性的能量密度退化。对质子能量的依赖相比，非电离能量损失计算。
Optical links are used for data transmission of the ATLAS inner detector in a radiation hazard environment at the Large Hadron Collider (LHC). The radiation tolerance is studied for the opto-electronics of GaAs VCSEL and epitaxial Si PIN with 30 and 70MeV protons at CYRIC. High speed Si and GaAs PIN photo-diodes are also investigated for upgrade to super-LHC. The annealing of GaAs VCSEL by charge injection is characterized. The GaAs devices show approximately linear degradations to fluence. The dependence on proton energy is compared to the Non-Ionizing Energy Loss calculations.