Global Existence and Relaxation Limit for Smooth Solutions to the Euler-Poisson Model for Semiconductors
Global Existence and Relaxation Limit for Smooth Solutions to the Euler-Poisson Model for Semiconductors
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DOI：
10.1137/s0036141099355174
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
G. Alì;Dario Bini;S. Rionero
中科院分区：
文献类型：
--
作者：
G. Alì;Dario Bini;S. Rionero
We establish the global existence of smooth solutions of the Cauchy problem for the one-dimensional Euler--Poisson model for semiconductors, under the assumption that the initial data are perturbations of a stationary solution of the drift-diffusion equations. The resulting evolutionary solutions converge asymptotically in time to the unperturbed state.
