Low temperature annealing effects on martensitic transformation and exchange bias behavior of Ni-Mn-Sn free-standing alloy thin films
Low temperature annealing effects on martensitic transformation and exchange bias behavior of Ni-Mn-Sn free-standing alloy thin films
复制标题
低温退火对Ni-Mn-Sn自支撑合金薄膜马氏体相变和交换偏置行为的影响
DOI：
10.1039/c7ra07942g
复制
发表时间：
2017
期刊：
影响因子：
3.9
通讯作者：
Zhu Jiachen
中科院分区：
文献类型：
--
作者：
Wang Zhenhua;Guo Erjun;Tan Changlong;Tian Xiaohua;Cai Wei;Zhu Jiachen
低温退火（<500 °C）是实现Ni-Mn-Sn合金薄膜在微机电系统（MEMS）驱动器中应用的新功能的关键。然而，由于衬底的限制，实现Ni-Mn-Sn薄膜的低温退火是非常困难的。本文报道了低温退火对Ni 51 Mn 36 Sn 13自支撑合金薄膜的微观结构、马氏体相变和交换偏压（EB）行为的影响。我们发现，低温退火显着增加了在奥氏体相的有序度，导致马氏体相变温度（TM）和居里温度（TC）的奥氏体相的增加。更有趣的是，在Ni 51 Mn 36 Sn 13自支撑合金薄膜中可以观察到窄的热滞后和交换偏置效应; EB场（HE）和矫顽力（HC）随着退火温度的升高而增加。当退火温度为673 K时，自支撑膜的最大HE和HC分别为31.10 Oe和129.64 Oe。我们的工作将提高材料性能的低温退火Ni-Mn-Sn薄膜在MEMS中的应用。
Low temperature annealing (<500 °C) is the key to realizing the novel functionalities of Ni–Mn–Sn alloy thin film for applications in a micro-electro-mechanical systems (MEMS) drive. However, it is very difficult to realize the low temperature annealing of Ni–Mn–Sn thin films, which is limited due to substrate constraints. Herein we report the effects of low temperature annealing on the microstructure, martensitic transformation and exchange bias (EB) behavior of Ni51Mn36Sn13 free-standing alloy thin films. We find that low temperature annealing significantly increases the degree of ordering in the austenite phase, leading to an increase in the martensitic transformation temperature (TM) and the Curie temperature (TC) of the austenitic phase. More interestingly, a narrow thermal hysteresis and exchange bias effects can be observed in the Ni51Mn36Sn13 free-standing alloy thin films; EB field (HE) and coercivity (HC) increase with an increase in annealing temperature. When the annealing temperature of free-standing films is 673 K, the maximum HE and HC are 31.10 Oe and 129.64 Oe, respectively. Our work would enhance the material performance for low temperature annealing applications of Ni–Mn–Sn thin films in MEMS.