Fermi-Level Alignment at Metal-Carbon Nanotube Interfaces: Application to Scanning Tunneling Spectroscopy
Fermi-Level Alignment at Metal-Carbon Nanotube Interfaces: Application to Scanning Tunneling Spectroscopy
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金属-碳纳米管界面的费米能级对准：在扫描隧道光谱中的应用
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
S. Datta
中科院分区：
文献类型：
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作者：
Yongqiang Xue;S. Datta
在任何金属-碳纳米管界面处都存在电荷转移，并且诱导的界面场决定了碳纳米管能带结构相对于金属费米能级的位置。在单壁碳纳米管（SWNT）的情况下，支持在金衬底上，我们表明，电荷转移引起的局部静电势扰动，从而引起所观察到的费米能级移动在扫描隧道光谱（STS）测量。我们还讨论了这项研究的相关性，最近的实验碳纳米管晶体管，并认为费米能级对准将是不同的碳纳米管晶体管与低电阻和高电阻接触。
At any metal-carbon nanotube interface there is charge transfer and the induced interfacial field determines the position of the carbon nanotube band structure relative to the metal Fermi-level. In the case of a single-wall carbon nanotube (SWNT) supported on a gold substrate, we show that the charge transfers induce a local electrostatic potential perturbation which gives rise to the observed Fermi-level shift in scanning tunneling spectroscopy (STS) measurements. We also discuss the relevance of this study to recent experiments on carbon nanotube transistors and argue that the Fermi-level alignment will be different for carbon nanotube transistors with low resistance and high resistance contacts.