Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches
Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches
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DOI：
10.1063/1.2940728
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发表时间：
2008-06
影响因子：
3.2
通讯作者：
Liqiang Tian;W. Shi
中科院分区：
文献类型：
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作者：
Liqiang Tian;W. Shi
本文报道在半绝缘GaAs光电导开关中观察到光电荷畴的猝灭畴模式，并根据光电荷畴模型解释了锁定效应的典型特征。结果表明，该畴是由光生载流子形成的，猝灭畴是由于电路自激和开关体中的转移电子振荡的相互作用。在磁畴转变过程中，当开关两端的偏置电场（大于古恩阈值）在维持电场（维持磁畴所需的最小电场）以下摆动时，交流电场对偏置电场进行调制，从而得到淬灭磁畴模式。在非线性工作模式下，光生载流子诱导的畴内电场将导致强碰撞电离，并伴随电子空穴复合辐射。
This paper reports that the quenched-domain mode of luminous charge domain has been observed in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) and the typical characteristics of lock-on effect have been explained based on the model of luminous charge domain. It is shown that the domain is formed by photogenerated carriers and the quenched domain is due to the interaction of the circuit self-excitation and transferred-electron oscillation in the bulk of switch. During the transit of the domain, the bias electric field (larger than Gunn threshold) across the switch is modulated by the ac electric field, when the instantaneous bias electric field is swinging below the sustaining field (the minimum electric field required to support the domain), and then the quenched-domain mode is obtained. When PCSSs operate in nonlinear mode, the ultrahigh electric field of domain induced by photogenerated carriers leads to strong impact ionization accompanied by electron-hole recombination radiat...