Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling
Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling
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速度过冲、多晶硅耗尽和反型层量化对 NMOSFET 缩放的影响
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
C. Hu
中科院分区：
文献类型：
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作者：
M. Orshansky;D. Sinitsky;J. Bokor;C. Hu
研究了电子速度过冲对 MOSFET 缩放的影响。首先描述了 MEDICI 2D 设备模拟器对实验数据的校准。然后，使用校准模拟器研究 NMOS 缩放趋势。考虑了反型层量子化效应和多晶硅栅极耗尽，并且显示它们对 NMOS 电流驱动具有显着影响。结果表明，尽管电源电压按比例缩放，但速度过冲仍将允许 NMOS 电流驱动持续增强。
The impact of electron velocity overshoot on MOSFET scaling is investigated. The calibration of a MEDICI 2D device simulator to experimental data is first described. Then, NMOS scaling trends are studied using the calibrated simulator. Inversion layer quantization effects and polysilicon gate depletion are taken into account, and are shown to have a significant impact on NMOS current drive. The results show that velocity overshoot will allow continued enhancement of the NMOS current drive, despite power supply voltage scaling.