Deposition of α-Al2O3 hard coatings by reactive magnetron sputtering
Deposition of α-Al2O3 hard coatings by reactive magnetron sputtering
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DOI：
10.1016/j.surfcoat.2003.11.017
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发表时间：
2004-07
影响因子：
5.4
通讯作者：
Toshimi Kohara;H. Tamagaki;Yoshimitsu Ikari;H. Fujii
中科院分区：
文献类型：
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作者：
Toshimi Kohara;H. Tamagaki;Yoshimitsu Ikari;H. Fujii
在工业生产规模的PVD系统中，采用反应磁控溅射法，在700 °C以上以0.5-0.7 μm/h的沉积速率沉积了晶态α-Al_2 O_3薄膜。实验中，以Si片和CrN涂层硬质合金为基体，先进行氧化预处理，然后通过改变工艺温度和基体偏压，进行Al 2 O3薄膜的沉积。这些薄膜的特性和沉积条件之间的相关性进行了调查。XRD研究表明，Al 2 O3薄膜的底层和衬底温度对薄膜结构有显著影响。在700 °C下，在CrN衬底上得到了主要由α相组成的Al_2O_3薄膜，而在750 ° C下，在不施加偏压的情况下，得到了纯的α-Al_2O_3薄膜。TEM观察表明，CrN膜氧化前处理形成的α-Cr2 O3中间层对α-Al 2 O3的形成起了重要作用。纳米压痕法测得α-Al 2 O3薄膜的硬度为23 GPa，施加偏压后硬度提高到27 GPa。
Crystalline α-Al2O3thin films have been deposited using reactive magnetron sputtering at the deposition rate of 0.5–0.7 μm/h above 700 °C in a commercial production scale PVD system. In the experiments, using Si wafers and CrN-coated cemented carbides as substrates, an oxidization pre-treatment was done, and then deposition of Al2O3films was carried out by varying the process temperature and the substrate bias voltage. An investigation of the correlation between characteristics of these films and deposition conditions was done. XRD study revealed that the under-layer of the Al2O3films and the substrate temperature for deposition remarkably influenced the film structure. Although only γ-Al2O3was observed in the films on the Si wafer, Al2O3film mostly consisting of α-phase was obtained on the CrN under-layer at 700 °C, and pure α-Al2O3film was deposited at 750 °C without applying bias voltage. TEM observation demonstrated that the α-Cr2O3interlayer formed by the oxidization pre-treatment of the CrN film played an important role in forming α-Al2O3. The hardness of the α-Al2O3film measured by nanoindentation was 23 GPa, and was enhanced to 27 GPa by applying bias.