InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors
InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors
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InGaAs/GaAsSb 带间隧道 FET 作为可调谐 RF 检测器
DOI：
10.1109/drc.2014.6872280
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
P. Fay
中科院分区：
文献类型：
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作者：
W. Li;T. Yu;J. Hoyt;P. Fay
基于III-V的隧道场效应管（tfet）由于有望实现亚热离子开关斜率（< 60 mV/ 10年）以实现持续的功率限制逻辑缩放而引起了广泛的兴趣。然而，这些相同的特性也为非逻辑应用程序提供了优势；特别是，传输特性中的强非线性-带间隧道固有的能量滤波功能-使这些设备成为非线性模拟应用的有吸引力的候选者，例如用于成像和传感的高频检测，并且使用三端设备进行检测所提供的输入/输出隔离为系统设计提供了相当大的优势。与双端设备相比（例如，不需要笨重和带宽限制的RF/DC分离电路）。我们在此报告了III-V波段间隧道场效应管作为射频探测器的首次实验演示。
III-V based tunnel FETs (TFETs) have attracted wide interest for the promise of achieving sub-thermionic switching slopes (<; 60 mV/decade) to enable continued power-constrained scaling for logic. These same characteristics, however also offer advantages for non-logic applications; in particular, the strong nonlinearity in the transfer characteristics - a function of the energy filtering inherent with interband tunneling - makes these devices attractive candidates for nonlinear analog applications such as high-frequency detection for imaging and sensing, and the input/output isolation afforded by use of a three-terminal device for detection offers considerable advantages for system design, compared to two-terminal devices (e.g. bulky and bandwidth-limiting RF/DC separation circuits are not required). We report here the first experimental demonstration of an III-V interband tunnel FET as an RF detector.