Valley-contrasting physics in graphene: Magnetic moment and topological transport
Valley-contrasting physics in graphene: Magnetic moment and topological transport
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DOI：
10.1103/physrevlett.99.236809
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发表时间：
2007-12-07
影响因子：
8.6
通讯作者：
Niu, Qian
中科院分区：
文献类型：
--
作者：
Xiao, Di;Yao, Wang;Niu, Qian
我们调查的物理性质，可以用来区分谷自由度的系统中的反转对称性被打破，使用石墨烯系统为例。我们表明，赝自旋与谷指数的载流子有一个内在的磁矩，在密切类似的玻尔磁子的电子自旋。还存在谷依赖的Berry相位效应，其可导致谷对比霍尔输运，其中不同谷中的载流子转向横向于平面内电场的相反方向。这些效应可用于通过磁和电手段产生和检测谷极化，形成基于谷的电子应用的基础。
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the valley-based electronics applications.