Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
复制标题
新兴多栅极 CMOS 技术中的变化感知模拟和混合信号电路设计
DOI：
10.1007/978-90-481-3280-5
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
M. Fulde
中科院分区：
文献类型：
--
作者：
M. Fulde
由于CMOS的尺度正在达到纳米区域，严重的限制迫使引入新的材料，器件架构和器件概念。采用高k栅电阻的多栅器件被认为是克服传统平面体CMOS的这些缩放限制的有前途的解决方案。《新兴多门CMOS技术中的变化感知模拟和混合信号电路设计》提供了新兴高k和多门CMOS技术中模拟和混合信号电路的技术导向评估。
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.