High quality heteroepitaxial AlN films on diamond
High quality heteroepitaxial AlN films on diamond
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金刚石上高质量异质外延 AlN 薄膜
DOI：
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发表时间：
2004
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通讯作者：
M. Stutzmann
中科院分区：
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作者：
G. Vogg;C. Miskys;J. Garrido;M. Hermann;M. Eickhoff;M. Stutzmann
采用x射线衍射（XRD）和原子力显微镜（AFM）研究了等离子体诱导分子束外延在（100）和（111）取向金刚石（Cα）衬底上生长的异质外延AlN薄膜。在两个方向上都观察到几乎无应变的纤锌矿AlN的高质量外延生长。对于AlN/Cα(111)异质结构，得到了外延取向关系（0001）[1010]AlN∥(111)[011]Cα。然而，高达20%的外延层与（1011）AlN∥(111)Cα取向不同。对于Cα(100)上的AlN，发现了具有（0001）[1010]AlNI∥(100)[011]Cα或（0001）[1210]AlNII∥(100)[011]Cα的双畴结构。AlN/Cα(100)的x射线衍射扫描线宽和2θ/ω扫描线宽分别为1.4和0.17°，AlN/Cα(111)的x射线衍射扫描线宽分别为0.55°和0.11°，在相似条件下生长的AlN/蓝宝石（0001）参考样品的x射线衍射线宽分别为0.51和0.05°。因此，AlN在Cα(111)上的晶体质量接近于
Heteroepitaxial AlN films grown on (100)- and (111)-oriented diamond (Cα) substrates by plasma-induced molecular beam epitaxy have been investigated by x-ray diffraction (XRD) and atomic force microscopy (AFM). High quality epitaxial growth of almost strain-free wurtzite AlN is observed for both orientations. For the AlN/Cα(111) heterostructures, the epitaxial orientation relationship (0001)[1010] AlN∥(111)[011] Cα is obtained. However, a significant fraction of up to 20% of the epitaxial layer is oriented differently with (1011) AlN∥(111) Cα. In case of AlN on Cα(100), a double-domain structure with either (0001)[1010] AlNI∥(100)[011] Cα or (0001)[1210] AlNII∥(100)[011] Cα is found. The linewidths of the XRD ω and 2θ/ω scans of the symmetric AlN 002 reflection have been determined as 1.4 and 0.17° for AlN/Cα(100), 0.55° and 0.11° for AlN/Cα(111), as well as 0.51 and 0.05° for an AlN/sapphire (0001) reference sample grown under similar conditions. Thus, the crystal quality of AlN on Cα(111) is close...