Unconventional pairing in single FeSe layers
Unconventional pairing in single FeSe layers
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DOI：
10.1103/physrevb.100.020503
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发表时间：
2019-07-11
影响因子：
3.7
通讯作者：
Wulfhekel, Wulf
中科院分区：
文献类型：
--
作者：
Jandke, Jasmin;Yang, Fang;Wulfhekel, Wulf
本文报道了利用两种互补的光谱技术，利用非弹性电子散射的方法测量了在SrTiO3上生长的单层FeSe薄膜中的电子-玻色子耦合。扫描隧道光谱表明，在T-c以下激发谱完全间隙，而显著的电子-声子耦合仅限于空间受限区域。此外，高分辨率电子能量损失谱显示既不强也不依赖k的电子-声子耦合。我们的研究结果强烈支持电子配对机制。
Here we report measurements of the electron-boson coupling in single-layer FeSe films grown on SrTiO3 by means of inelastic electron scattering using two complementary spectroscopic techniques. Scanning tunneling spectroscopy shows that the excitation spectrum becomes fully gapped below T-c whereas significant electron-phonon coupling is limited to spatially confined regions. Further, high-resolution electron energy loss spectroscopy shows neither strong nor k-dependent electron-phonon coupling. Our results strongly support a predominantly electronic pairing mechanism.