Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot
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DOI：
10.1103/physrevb.106.l201401
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发表时间：
2022-06
影响因子：
3.7
通讯作者：
Daniel N. Shanks;Fateme Mahdikhanysarvejahany;M. Koehler;D. Mandrus;T. Taniguchi;Kenji Watanabe;
中科院分区：
文献类型：
--
作者：
Daniel N. Shanks;Fateme Mahdikhanysarvejahany;M. Koehler;D. Mandrus;T. Taniguchi;Kenji Watanabe;
2D半导体中的层间激子（IX）具有长寿命和自旋谷耦合物理，长期以来的目标是用于谷电子应用的单激子捕获。在这项工作中，我们使用纳米图案化的石墨烯栅极来创建静电IX陷阱。我们测量一个独特的功率依赖的蓝移IX能量，窄线宽发射表现出离散的能量跳跃。我们将这些跳跃归因于陷阱内IX的数量占用的量化增加，并与理论模型进行比较，以分配最低能量的发射线到单个IX复合。
: Interlayer excitons (IXs) in 2D semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single exciton trapping for valleytronic applications. In this work, we use a nano-patterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blue-shift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single IX recombination.