InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing
InGaAs/InP Single-Photon Detector Gated at 1.3 GHz With 1.5% Afterpulsing
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DOI：
10.1109/jstqe.2014.2361790
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发表时间：
2015-05
影响因子：
4.9
通讯作者：
C. Scarcella;G. Boso;A. Ruggeri;A. Tosi
中科院分区：
文献类型：
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作者：
C. Scarcella;G. Boso;A. Ruggeri;A. Tosi
我们设计了一个基于InGaAs/InP单光子雪崩二极管（SPAD）的单光子探测器，该探测器工作在1.3GHz，具有很低的后脉冲（约1.5%），高动态范围（最大计数率为650 Mcount/s），光子探测效率高（1550 nm时>30%）、低噪声（每门暗计数率为2.2 × 10-5）和低时序抖动（半峰全宽<70 ps）。SPAD与反相偏置的“虚拟”结构配对。正弦选通信号通过共阴极配置和通过调整偏置两个臂的信号的相对幅度和相位来消除。这种配置允许我们将选通频率从1 GHz调整到1.4 GHz，并且也可以在所谓的无门模式下操作，其中门正弦波相对于光刺激解锁，导致InGaAs/InP SPAD的自由运行等效操作，在1550 nm处具有约4%的平均光子检测效率。
We demonstrate a single-photon detector based on InGaAs/InP single-photon avalanche diodes (SPADs) sinusoidal-gated at 1.3 GHz with very low afterpulsing (about 1.5%), high dynamic range (maximum count rate is 650 Mcount/s), high photon detection efficiency (>30% at 1550 nm), low noise (per-gate dark count rate is 2.2 × 10-5), and low timing jitter (<;70 ps full-width at half-maximum). The SPAD is paired with a “dummy” structure that is biased in antiphase. The sinusoidal gating signals are cancelled by means of a common-cathode configuration and by adjusting the relative amplitude and phase of the signals biasing the two arms. This configuration allows us to adjust the gating frequency from 1 to 1.4 GHz and can be operated also in the so-called gate-free mode, with the gate sine-wave unlocked with respect to the light stimulus, resulting in a free-running equivalent operation of the InGaAs/InP SPAD with about 4% average photon detection efficiency at 1550 nm.