InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
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DOI：
10.1007/978-1-4020-8425-6_31
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
V. A. Solov'ev;P. Carrington;Q. Zhuang;K. Lai;S. Haywood;S. Ivanov;A. Krier
中科院分区：
文献类型：
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作者：
V. A. Solov'ev;P. Carrington;Q. Zhuang;K. Lai;S. Haywood;S. Ivanov;A. Krier
我们报告了使用 Sb2 和 As2 通量插入 InAs 基质中的 InSb 亚单层的分子束外延生长。 InSb/InAs 纳米结构在室温下表现出强烈的中红外光致发光。亚单层插入物的标称厚度可以通过生长温度（TGr = 450–320°C）来控制，这会导致室温下发射波长在3.6–4.0μm范围内变化。还对使用 (Sb2, As2) 和 (Sb4, As4) 生长的结构的光学特性进行了比较分析。
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb2and As2fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr= 450–320°C) which gives rise to the variation of the emission wavelength within the 3.6–4.0μm range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2, As2) and (Sb4, As4) is also presented.