Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD
Physical properties and electrical characteristics of H2O-based and O3-based HfO2 films deposited by ALD
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ALD 沉积的 H2O 基和 O3 基 HfO2 薄膜的物理性能和电学特性
DOI：
10.1016/j.microrel.2012.01.010
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发表时间：
2012-06-01
影响因子：
1.6
通讯作者：
Hao, Yue
中科院分区：
文献类型：
--
作者：
Fan, Jibin;Liu, Hongxia;Hao, Yue
以臭氧（O3-）和水（H2O）为氧化剂，采用原子层沉积法（ALD）在p型Si（100）衬底上存款氧化铪（HfO 2）薄膜。氧化剂和沉积温度的不同对HfO 2薄膜的物理性能和电学特性有很大的影响。与以O-3为氧化剂相比，以H2O为氧化剂生长的HfO 2薄膜在成分和生长速率上更为一致。O-3基HfO 2薄膜比H2O基HfO 2薄膜具有更低的C杂质和更高的N杂质浓度。研究了退火工艺对氧化铪薄膜电性能和稳定性的影响。在O-3基HfO 2的C-V曲线中观察到一个宽度台阶，该台阶在退火过程后消失。这是因为在退火过程中，O-3基HfO 2薄膜中不稳定的Hf-O-N和Hf-N键与非HfO 2氧重新键合，N-1 s键的结合能发生了移动。(C)2012爱思唯尔有限公司保留所有权利。
Ozone (O-3) and H2O are used as the oxidant to deposit hafnium oxide (HfO2) thin films on p-type Si (100) wafers by atomic layer deposition (ALD). The physical properties and electrical characteristics of HfO2 films change greatly for different oxidants and deposition temperature. Compared with O-3 as the oxidant, HfO2 films grown with H2O as the oxidant are more consistent in composition and growth rate. The O-3-based HfO2 films have lower C impurity and higher concentration N impurity than the H2O-based HfO2 films. The impact of the annealing process on the electrical properties and stability of HfO2 films are also investigated. A width step is observed in the O-3-based HfO2 C-V curves, which disappears after annealing process. It is because the unstable Hf-O-N and Hf-N bonds in O-3-based HfO2 films are re-bonded with the non-HfO2 oxygen after annealing process, and the binding energy of N-1s shifts. (C) 2012 Elsevier Ltd. All rights reserved.