Site-selective low-temperature growth of Au nanowires on Si substrates irradiated with low-energy Ar ions
Site-selective low-temperature growth of Au nanowires on Si substrates irradiated with low-energy Ar ions
复制标题
低能 Ar 离子辐照下的 Si 基底上金纳米线的选点低温生长
DOI：
10.1016/j.apsusc.2022.154616
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发表时间：
2022
影响因子：
6.7
通讯作者：
Takahiro Katsumi
中科院分区：
文献类型：
--
作者：
Mizutani Hitomi;Nishio Koji;Takahiro Katsumi
我们证明了独立的单晶Au纳米线的位置选择性生长在低温下（约573 K），通过预处理的硅衬底与低能离子束，然后通过热蒸发的Au。利用这种方法，制备出了直径为50-200 nm，长度为几百nm ~ 100 μm，纵横比为1000以上的Au纳米线。在沉积Au的过程中，Au纳米线只能生长在Si衬底上离子辐照区和未辐照区的边界处。此外，通过在离子照射期间用细网掩蔽Si衬底来图案化Si衬底，在照射区域和未照射区域之间产生更多的边界，增加了Au NW的数量。透射电子显微镜和选区电子衍射分析表明，纳米线为单晶，沿[1 1 0]方向沿着生长。
We demonstrated the site-selective growth of freestanding single-crystalline Au NWs at a low temperature (approximately 573 K) by pretreating a silicon substrate with low-energy ion beams, followed by thermal evaporation of Au. Using this method, Au NWs with aspect ratios up to 1000 or more, that is, 50–200 nm in diameter and lengths ranging from several hundred nanometers to approximately 100 μm, were fabricated. Au NWs could only be grown at the boundary between the ion-irradiated and unirradiated regions on the Si substrates during the deposition of Au. Furthermore, patterning the Si substrate by masking it with a fine mesh during ion irradiation creates more boundaries between the irradiated and unirradiated regions, increasing the number of Au NWs. Transmission electron microscopy and selected-area electron diffraction revealed that the NWs were single crystals and grew along the [1 1 0] direction.