n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups
n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups
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DOI：
10.1021/ja055686f
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发表时间：
2005-11-02
影响因子：
15
通讯作者：
Yamashita, Y
中科院分区：
文献类型：
--
作者：
Ando, S;Murakami, R;Yamashita, Y
开发了新型噻唑低聚物和含三氟甲基苯基的噻唑/噻吩共低聚物作为ofet的n型半导体。它们表现出优异的n型性能，具有较高的电子迁移率。5,5 ' -二噻唑与三氟甲基苯基形成紧密排列的二维柱状结构，从而形成高性能的n型场效应管。在ots处理的衬底上，电子迁移率提高到1.83 cm2/Vs。
Novel thiazole oligomers and thiazole/thiophene co-oligomers with trifluoromethylphenyl groups were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. A 5,5‘-bithiazole with trifluoromethylphenyl groups forms a closely packed two-dimensional columnar structure leading to a high performance n-type FET. The electron mobility was enhanced to 1.83 cm2/Vs on the OTS-treated substrate.