The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction
The ultralow driven current ultraviolet-blue light-emitting diode based on n-ZnO nanowires/i-polymer/p-GaN heterojunction
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DOI：
10.1063/1.3505929
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发表时间：
2010-10
影响因子：
4
通讯作者：
Zhengtang Guo;Hong Zhang;Dongxu Zhao;Yichun Liu;B. Yao;Binghui Li;Zhenzhong Zhang;D. Shen
中科院分区：
文献类型：
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作者：
Zhengtang Guo;Hong Zhang;Dongxu Zhao;Yichun Liu;B. Yao;Binghui Li;Zhenzhong Zhang;D. Shen
在25 μA的超低驱动电流下，n型ZnO纳米线/绝缘聚合物/p型GaN发光二极管（LED）可获得紫外蓝光电致发光，并具有微弱的缺陷相关发射。还探索i-MgO层作为用于比较的载流子阻挡层。对于i-聚合物插入的LED，EL发射峰位于400 nm处，通过分析光谱，认为发射包括来自ZnO和GaN的几种化合物。柔性载流子阻挡层，如i-聚合物，可以有效地限制辐射复合区。
Under the ultralow driven current of 25 μA an ultraviolet (UV)-blue electroluminescence (EL) with a weak defect-related emission could be obtained for the n type (n-) ZnO nanowires (NWs)/insulating (i-) polymer/p-type (p-) GaN light-emitting diode (LED). The i-MgO layer was also explored as a carrier blocking layer for the comparison. For the i-polymer inserted LED the EL emission peak was located at 400 nm, by analyzing the spectra it is believed that the emission includes several compound originations from both ZnO and GaN. The flexible carrier blocking layer, such as i-polymer, could effectively confine the radiative recombination zone.