Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
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DOI：
10.1016/j.jcrysgro.2012.03.044
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发表时间：
2012-06-01
影响因子：
1.8
通讯作者：
Suemasu, Takashi
中科院分区：
文献类型：
--
作者：
Baba, Masakazu;Toh, Katsuaki;Suemasu, Takashi
采用分子束外延技术在Si（111）衬底上生长了a轴取向的非掺杂n-BaSi 2外延薄膜，并利用反射高能电子衍射、X射线衍射和透射电子显微镜（TEM）对薄膜的结晶质量和晶界进行了研究。BaSi 2薄膜的晶粒尺寸估计为约0.1-0.3 μ m，并且在平面图TEM图像中观察到直晶界（GB）。在双光束衍射条件下的暗场TEM图像表明，这些GB主要由BaSi 2 {011}平面。用电子束感生电流技术测得n-BaSi_2中少数载流子的扩散长度约为10 μ m。(C)2012爱思唯尔有限公司版权所有。
a-Axis-oriented undoped n-BaSi2 epitaxial films were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grain boundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmission electron microscopy (TEM). The grain size of the BaSi2 films was estimated to be approximately 0.1-0.3 mu m, and straight grain boundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 mu m by an electron-beam-induced current technique. (C) 2012 Elsevier B.V. All rights reserved.