Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)
Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)
复制标题
超薄氟化聚酰亚胺对聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐表面改性提高聚合物发光二极管的性能
DOI：
10.1021/jp810824m
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发表时间：
2009-04
影响因子：
3.7
通讯作者：
Wang, Lixiang
中科院分区：
文献类型：
--
作者：
Zhang, Baohua;Li, Wenmu;Yang, Junwei;Fu, Yingying;Xie, Zhiyuan;Zhang, Suobo;Wang, Lixiang
在此，绝缘氟化聚酰亚胺（F-PI）用作聚合物发光二极管中聚（3，4-乙烯二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）的超薄缓冲层，以增强器件性能。选择性增溶
Herein, an insulating fluorinated polyimide (F−PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubilit