High pressure synthesis of Te-doped CoSb3 with enhanced thermoelectric performance
High pressure synthesis of Te-doped CoSb3 with enhanced thermoelectric performance
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DOI：
10.1007/s10854-014-2411-3
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Qian Zhang;Xiaohui Li;Yulong Kang;Long Zhang;D. Yu;Julong He;Zhongyuan Liu;Yongjun Tian
中科院分区：
文献类型：
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作者：
Qian Zhang;Xiaohui Li;Yulong Kang;Long Zhang;D. Yu;Julong He;Zhongyuan Liu;Yongjun Tian
采用高压合成法和放电等离子烧结法成功合成了Te掺杂CoSb 3方钴矿。Te原子引入CoSb 3的晶格位置导致n型导电性，其随着Te掺杂水平的升高而增加。Co4Sb11.5Te0.5的功率因数在温度高于650 K时大于4，000 µWm− 1 K −2。这对于用单一元素取代的方钴矿来说是一个重要的值。同时，Te掺杂的CoSb 3的热导率由于更强的电子-声子散射而被大大抑制。优化后的Co4Sb11.5Te0.5在883 K时的ZT值为1.15，与最先进的单元素填充方钴矿相媲美。
Te-doped CoSb3 skutterudites were successfully synthesized with high pressure synthesis method followed by spark plasma sintering. The introducing of Te atoms into the lattice sites of CoSb3 resulted in n-type electrical conductivity, which increased with elevated Te doping level. An enhanced power factor, larger than 4,000 µWm−1K−2 for temperatures higher than 650 K, was observed for Co4Sb11.5Te0.5. This is a significant value for skutterudites substituted with a single element. Meanwhile, the thermal conductivity of Te-doped CoSb3 was greatly suppressed due to stronger electron–phonon scattering. The optimized Co4Sb11.5Te0.5 showed a ZT value of 1.15 at 883 K, which rivals the state-of-the-art single elemental filled skutterudites.