A hole spin qubit in a fin field-effect transistor above 4 kelvin
A hole spin qubit in a fin field-effect transistor above 4 kelvin
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DOI：
10.1038/s41928-022-00722-0
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发表时间：
2022-03-03
影响因子：
34.3
通讯作者：
Kuhlmann, Andreas, V
中科院分区：
文献类型：
--
作者：
Camenzind, Leon C.;Geyer, Simon;Kuhlmann, Andreas, V
量子计算的最大挑战是实现可扩展性。以前遇到此类问题的经典计算目前依赖于承载数十亿鳍片场效应晶体管的硅芯片。这些设备足够小，适合量子应用：在低温下，被捕获在栅极下方的电子或空穴可以用作自旋量子位。这种方法可能允许量子硬件及其经典控制电子设备集成在同一芯片上。然而，这需要量子位在高于 1 K 的温度下运行，其中冷却克服了散热。在这里，我们展示了硅鳍式场效应晶体管可以承载运行在 4 K 以上的自旋量子位。我们实现了对空穴自旋的快速电控制，驱动频率高达 150 MHz，单量子位门保真度达到容错阈值，拉比振荡品质因数大于 87。我们的器件兼具行业兼容性和质量，并以灵活敏捷的方式制造，这将加速进一步的开发。鳍形晶体管可以承载足够高的空穴自旋量子位。温度有可能实现由传统电子设备共同集成在同一封装中控制的量子计算系统的扩展和开发。
The greatest challenge in quantum computing is achieving scalability. Classical computing, which previously faced such issues, currently relies on silicon chips hosting billions of fin field-effect transistors. These devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate can serve as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1 K, where the cooling overcomes heat dissipation. Here we show that silicon fin field-effect transistors can host spin qubits operating above 4 K. We achieve fast electrical control of hole spins with driving frequencies up to 150 MHz, single-qubit gate fidelities at the fault-tolerance threshold and a Rabi-oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development.Fin-shaped transistors can host hole spin qubits at high enough temperatures to potentially enable the scaling and development of quantum computing systems controlled by conventional electronics co-integrated in the same package.