High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
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DOI：
10.1021/nl049615a
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发表时间：
2004-06-01
期刊：
影响因子：
10.8
通讯作者：
Chung, KS
中科院分区：
文献类型：
--
作者：
Kim, HM;Cho, YH;Chung, KS
我们展示了通过金属有机氢化物气相外延（MO-HVPE）实现高亮度和高效率的发光二极管（LED），使用无位错的铟镓氮化物（InGaN）/氮化镓（GaN）多量子阱（MOW）纳米棒（NR）阵列。蓝宝石衬底上的MOW NR阵列（NRA）被埋在旋涂玻璃（SOG）中以隔离各个NR并使p型NR与p型电极接触。MOW NRA LED具有与常规宽区域（BA）LED类似的电气特性。然而，由于缺少位错和NR侧壁提供的大表面积，内部和提取效率都显著提高。在20 mA的d 0电流下，M0 W NRA LED发射比常规BA LED多约4.3倍的光，即使M0 W NRA LED的总有效体积比常规LED小得多。此外，生产MOW NRA LED所涉及的制造工艺与传统BA LED几乎相同。因此，这些MOW NRA LED的总产量基本上与常规BA LED的总产量相同并不令人惊讶。本发明的利用无位错MOW NRA LED的方法可应用于超亮白色LED以及其它半导体LED，以提高LED的总外部效率和亮度。
We demonstrate the realization of the high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) multiquantum-well (MOW) nanorod (NR) arrays by metal organic-hydride vapor phase epitaxy (MO-HVPE). MOW NR arrays (NRAs) on sapphire substrate are buried in spin-on glass (SOG) to isolating individual NRs and to bring p-type NRs in contact with p-type electrodes. The MOW NRA LEDs have similar electrical characteristics to conventional broad area (BA) LEDs. However, due to the lack of dislocations and the large surface areas provided by the sidewalls of NRs, both internal and extraction efficiencies are significantly enhanced. At 20 mA do current, the MOW NRA LEDs emit about 4.3 times more light than the conventional BA LEDs, even though overall active volume of the MOW NRA LEDs is much smaller than conventional LEDs. Moreover, the fabrication processes involved in producing MOW NRA LEDs are almost the same for conventional BA LEDs. It is, thus, not surprising that the total yield of these MOW NRA LEDs is essentially the same as that of conventional BA LEDs. The present method of utilizing dislocation-free MOW NRA LEDs is applicable to super-bright white LEDs as well as other semiconductor LEDs for improving total external efficiency and brightness of LEDs.