Synthesis and luminescent properties of UV-excited thermal stable red-emitting phosphor Ba3Lu(PO4)3: Eu3+ for NUV LED
Synthesis and luminescent properties of UV-excited thermal stable red-emitting phosphor Ba3Lu(PO4)3: Eu3+ for NUV LED
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DOI：
10.1016/j.optmat.2013.12.024
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发表时间：
2014-02-01
影响因子：
3.9
通讯作者：
Gong, Menglian
中科院分区：
文献类型：
--
作者：
Zhang, Xinguo;Zhang, Jilin;Gong, Menglian
采用高温固相法合成了Ba3Lu(PO4)(3)：Eu3+系列荧光粉，并研究了它们的紫外-可见发光性能。对Eu3+在主晶格中的f-f跃迁进行了归属和讨论。激发光谱和发射光谱表明，该荧光粉可被近紫外光激发，并表现出较强的红光发射。研究了浓度猝灭对Eu3+发光的影响及其机理。这种荧光粉在高温(类似于180摄氏度)下表现出良好的热稳定性。用Ba3Lu(PO4)(3)：Eu3+和395 nm InGaN芯片制作的原型LED显示出明亮的红光发射。本研究表明，Ba3Lu(PO4)(3)：Eu3+可以作为一种潜在的近紫外发光二极管的红色荧光粉。(C)2013爱思唯尔B.V.保留所有权利。
A series of Ba3Lu(PO4)(3): Eu3+ phosphors were synthesized by high-temperature solid-state method, and their UV-vis luminescent properties were investigated. The f-f transitions of Eu3+ in the host lattice were assigned and discussed. The excitation and emission spectra indicate that this phosphor can be excited by near ultraviolet (NUV) light, and exhibits strong red emission. The concentration quenching on Eu3+ emission and its mechanism were investigated. This phosphor shows a good thermal stability at high temperature (similar to 180 degrees C). The fabricated prototype LEDs with Ba3Lu(PO4)(3): Eu3+ and 395 nm-emitting InGaN chips exhibit bright red emission. The present study suggests that Ba3Lu(PO4)(3): Eu3+ can be a potential red phosphor for NUV light-emitting diodes. (C) 2013 Elsevier B.V. All rights reserved.