Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001)
Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001)
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直接观察在 GaAs 上生长的富铜外延 CuInSe2 的 Cu2−xSe 相 (001)
DOI：
10.1063/1.368991
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发表时间：
1998
影响因子：
3.2
通讯作者：
H. Oyanagi
中科院分区：
文献类型：
--
作者：
P. Fons;S. Niki;A. Yamada;H. Oyanagi
Cu 2 −xSe是三元黄铜矿半导体CuInSe 2的重要杂质相，与Cu/In的组成比大于1有关。我们在一个典型的外延系统中直接观察到了在GaAs（001）上外延生长的富铜CuInSe 2薄膜上形成Cu 2 −xSe。原子力显微镜测量的表面拓扑结构的生长膜清楚地显示了小面矩形微晶的尺寸为100 nm的顺序。富铜CuInSe 2的横截面透射电子显微镜测量显示在表面上的矩形突起以及在CuInSe 2膜中的楔形刻面。二维倒易空间x射线映射的生长富铜CuInSe 2显示的面内晶格常数的Cu 2 −xSe相是部分应变的CuInSe 2层。Cu 2 −xSe的β相的存在也被认为是文献中CuInSe 2中Cu-Pt有序报告的另一种解释。应变相关表面与应变相关表面
Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface und...